All Transistors. BDB02B Datasheet

 

BDB02B Datasheet and Replacement


   Type Designator: BDB02B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

 BDB02B Substitution

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BDB02B Datasheet (PDF)

 9.1. Size:137K  motorola
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BDB02B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BDB02C/DOne Watt Amplifier TransistorsBDB02C,DPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSRating Symbol BDB02C BDB02D UnitCASE 2905, STYLE 1TO92 (TO226AE)CollectorEmitter Voltage VCEO 80 100 VdcCollectorBase Voltage VCES 80 100 VdcEmitterBase Voltage VEBO

Datasheet: BDAP54A , BDAP54B , BDAP54C , BDAP55 , BDB01A , BDB01B , BDB01D , BDB02A , 2N3906 , BDB02C , BDB02D , BDB03 , BDB04 , BDB05 , BDB06 , BDBO1C , BDC01A .

History: BUL54A-SM | 2SC812 | CL152-4 | 2SC4501 | BF241A | MP3251A | MP101B

Keywords - BDB02B transistor datasheet

 BDB02B cross reference
 BDB02B equivalent finder
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