BDB02B Specs and Replacement
Type Designator: BDB02B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
BDB02B Substitution
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BDB02B datasheet
Detailed specifications: BDAP54A, BDAP54B, BDAP54C, BDAP55, BDB01A, BDB01B, BDB01D, BDB02A, 13007, BDB02C, BDB02D, BDB03, BDB04, BDB05, BDB06, BDBO1C, BDC01A
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