BDC01C Datasheet, Equivalent, Cross Reference Search
Type Designator: BDC01C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
BDC01C Transistor Equivalent Substitute - Cross-Reference Search
BDC01C Datasheet (PDF)
bdc01dre.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BDC01D/DOne Watt Amplifier TransistorBDC01DNPN SiliconCOLLECTOR23BASE1231EMITTERCASE 2905, STYLE 14MAXIMUM RATINGSTO92 (TO226AE)Rating Symbol BDC01D UnitCollectorEmitter Voltage VCEO 100 VdcCollectorBase Voltage VCBO 100 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current
bdc01d-d.pdf
BDC01DOne Watt AmplifierTransistorNPN Siliconhttp://onsemi.comFeatures Pb-Free Package is Available*COLLECTOR2MAXIMUM RATINGS3Rating Symbol Value Unit BASECollector -Emitter Voltage VCEO 100 Vdc1Collector -Base Voltage VCBO 100 VdcEMITTEREmitter -Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 0.5 AdcTotal Device Dissipation @ TA = 25C PD 1.0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
