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BDC01D Specs and Replacement

Type Designator: BDC01D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

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BDC01D datasheet

 0.1. Size:130K  motorola

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BDC01D

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 0.2. Size:59K  onsemi

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BDC01D

BDC01D One Watt Amplifier Transistor NPN Silicon http //onsemi.com Features Pb-Free Package is Available* COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector -Emitter Voltage VCEO 100 Vdc 1 Collector -Base Voltage VCBO 100 Vdc EMITTER Emitter -Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25 C PD 1.0 ... See More ⇒

Detailed specifications: BDB03, BDB04, BDB05, BDB06, BDBO1C, BDC01A, BDC01B, BDC01C, 2SD718, BDC02A, BDC02B, BDC02C, BDC02D, BDC03, BDC04, BDC05, BDC06

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