BDC05 Specs and Replacement
Type Designator: BDC05
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
BDC05 Substitution
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BDC05 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BDC05/D One Watt High Voltage Transistor BDC05 NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Collector Emitter Voltage VCEO 300 Vdc CASE 29 05, STYLE 14 Collector Base Voltage VCBO 300 Vdc TO 92 (TO 226AE) Emitter Base Voltage VEBO 5.0 Vdc Collector Current ... See More ⇒
Detailed specifications: BDC01C, BDC01D, BDC02A, BDC02B, BDC02C, BDC02D, BDC03, BDC04, S8550, BDC06, BDC07, BDC08, BDCP20, BDCP25, BDP281, BDP283, BDP285
Keywords - BDC05 pdf specs
BDC05 cross reference
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History: BDC04 | BCR112 | BDP281
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