BDS13SM Datasheet, Equivalent, Cross Reference Search
Type Designator: BDS13SM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO252
BDS13SM Transistor Equivalent Substitute - Cross-Reference Search
BDS13SM Datasheet (PDF)
bds13smd.pdf
BDS13 BDS13SMD BDS13SMD05BDS14 BDS14SMD BDS14SMD05BDS15 BDS15SMD BDS15SMD05SILICON PNP EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES4.610.60.8FEATURES3.6 HERMETIC METAL OR CERAMIC PACKAGESDia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME
bds13smd05.pdf
BDS13 BDS13SMD BDS13SMD05BDS14 BDS14SMD BDS14SMD05BDS15 BDS15SMD BDS15SMD05SILICON PNP EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES4.610.60.8FEATURES3.6 HERMETIC METAL OR CERAMIC PACKAGESDia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N5120
