BDS18SM Specs and Replacement
Type Designator: BDS18SM
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO252
BDS18SM Substitution
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BDS18SM datasheet
BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION) ... See More ⇒
BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION) ... See More ⇒
isc Silicon PNP Power Transistor BDS18 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for power liner and switching -Gener purpose power . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CBO V Collect... See More ⇒
Detailed specifications: BDS14SM, BDS15, BDS15SM, BDS16, BDS16SM, BDS17, BDS17SM, BDS18, D965, BDS19, BDS19SM, BDS20, BDS20SM, BDS21, BDS21SM, BDS28A, BDS28ASM
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