BDS20 Specs and Replacement
Type Designator: BDS20
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO220
BDS20 Substitution
- BJT ⓘ Cross-Reference Search
BDS20 datasheet
SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD High DC Current Gain Hermetic Ceramic Surface Mount Package Designed For General Purpose Amplifiers and Low Speed Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 80V VCEO Collector Emitter Voltage 80V VE... See More ⇒
Detailed specifications: BDS16, BDS16SM, BDS17, BDS17SM, BDS18, BDS18SM, BDS19, BDS19SM, BC549, BDS20SM, BDS21, BDS21SM, BDS28A, BDS28ASM, BDS28B, BDS28BSM, BDS28C
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