All Transistors. BDS20 Datasheet

 

BDS20 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDS20
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220

 BDS20 Transistor Equivalent Substitute - Cross-Reference Search

   

BDS20 Datasheet (PDF)

 0.1. Size:452K  semelab
 bds20smd.pdf

BDS20 BDS20

SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD High DC Current Gain Hermetic Ceramic Surface Mount Package Designed For General Purpose Amplifiers and Low Speed Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 80V VCEO Collector Emitter Voltage 80V VE

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N3245 | FN4F4N | KRC282U

 

 
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