BDS21 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDS21
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220
BDS21 Transistor Equivalent Substitute - Cross-Reference Search
BDS21 Datasheet (PDF)
bds21smd.pdf
SILICON EPIBASE PNP DARLINGTON TRANSISTOR BDS21SMD High DC Current Gain Hermetic Ceramic Surface Mount Package Designed For General Purpose Amplifiers and Low Speed Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage -80V VCEO Collector Emitter Voltage -80V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .