BDS21SM Specs and Replacement
Type Designator: BDS21SM
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO252
BDS21SM Substitution
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BDS21SM datasheet
SILICON EPIBASE PNP DARLINGTON TRANSISTOR BDS21SMD High DC Current Gain Hermetic Ceramic Surface Mount Package Designed For General Purpose Amplifiers and Low Speed Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage -80V VCEO Collector Emitter Voltage -80V ... See More ⇒
Detailed specifications: BDS17SM, BDS18, BDS18SM, BDS19, BDS19SM, BDS20, BDS20SM, BDS21, BC556, BDS28A, BDS28ASM, BDS28B, BDS28BSM, BDS28C, BDS28CSM, BDS29A, BDS29ASM
Keywords - BDS21SM pdf specs
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History: BSW28 | DSC3001 | BDT42BF | 2SA1216
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