BDT62AF Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT62AF
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220F
BDT62AF Transistor Equivalent Substitute - Cross-Reference Search
BDT62AF Datasheet (PDF)
bdt62 bdt62a bdt62b bdt62c.pdf
isc Silicon PNP Darlington Power Transistors BDT62/A/B/CDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT62; -80V(Min)- BDT62A;CEO(SUS)-100V(Min)- BDT62B; -120V(Min)- BDT62CComplement to Type BDT63/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig
bdt62 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION DC Current Gain -hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C APPLICATIONS Designed for use in audio amplifier ou
bdt62f.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistors BDT62FDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type BDT63FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier output stages , genera
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N3169
