All Transistors. BDT64AF Datasheet

 

BDT64AF Datasheet and Replacement


   Type Designator: BDT64AF
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 22 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220F
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BDT64AF Datasheet (PDF)

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BDT64AF

isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CFDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDT65F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM

 8.1. Size:201K  inchange semiconductor
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BDT64AF

isc Silicon PNP Darlington Power Transistor BDT64/A/B/CDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDT65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(

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BDT64AF

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BDT64AF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U

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History: TFN847 | 2N1632 | MJD200G | KTP5513 | MMS8550 | BFY70 | UN9110S

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