BDT64AF Datasheet. Specs and Replacement

Type Designator: BDT64AF  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 22 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO220F

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BDT64AF datasheet

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BDT64AF

isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDT65F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM ... See More ⇒

 8.1. Size:201K  inchange semiconductor

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BDT64AF

isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDT65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒

 9.1. Size:478K  no

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BDT64AF

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 9.2. Size:167K  inchange semiconductor

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BDT64AF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U... See More ⇒

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Detailed specifications: BDT63B, BDT63BF, BDT63C, BDT63CF, BDT63F, BDT63-TO63, BDT64, BDT64A, MJE350, BDT64B, BDT64BF, BDT64C, BDT64CF, BDT64F, BDT65, BDT65A, BDT65AF

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