BDT93 Datasheet and Replacement
Type Designator: BDT93
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
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BDT93 Datasheet (PDF)
bdt91 bdt93 bdt95.pdf

isc Silicon NPN Power Transistor BDT91/93/95DESCRIPTIONDC Current Gain- h = 20~200@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT91; 80V(Min)- BDT93;CEO(SUS)100V(Min)- BDT95Complement to Type BDT92/94/96Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and ge
bdt91f bdt93f bdt95f.pdf

isc Silicon NPN Power Transistor BDT91F/93F/95FDESCRIPTIONDC Current Gain- h = 20~200@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT91F; 80V(Min)- BDT93F;CEO(SUS)100V(Min)- BDT95FComplement to Type BDT92F/94F/96FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stag
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: FHT9014L | BCY85 | BC808F | PMD9010D | BUL50A | CH3232 | DDA123JU
Keywords - BDT93 transistor datasheet
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History: FHT9014L | BCY85 | BC808F | PMD9010D | BUL50A | CH3232 | DDA123JU



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