All Transistors. BDV66D Datasheet

 

BDV66D Datasheet and Replacement


   Type Designator: BDV66D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TOP3
 

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BDV66D Datasheet (PDF)

 9.1. Size:102K  mospec
 bdv66 bdv67.pdf pdf_icon

BDV66D

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 9.2. Size:224K  inchange semiconductor
 bdv66 bdv66a bdv66b bdv66c.pdf pdf_icon

BDV66D

isc Silicon PNP Darlington Power Transistor BDV66/A/B/CDESCRIPTIONCollector Current -I = -16ACCollector-Emitter Saturation Voltage-: V = -2.0V(Max.)@ I = -10ACE(sat) CComplement to Type BDV67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching appli

 9.3. Size:158K  inchange semiconductor
 bdv66 a b c.pdf pdf_icon

BDV66D

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION Collector Current -IC= -16A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A Complement to Type BDV67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(

Datasheet: BDV65 , BDV65A , BDV65B , BDV65C , BDV66 , BDV66A , BDV66B , BDV66C , 2SD669A , BDV67 , BDV67A , BDV67B , BDV67C , BDV67D , BDV91 , BDV92 , BDV93 .

History: DZT591C | 2SC4110 | CHDTC144VKGP | BDW23C | TIP145T | CHT2222WGP | CHDTC115GUGP

Keywords - BDV66D transistor datasheet

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