BDV93 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDV93
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TOP3
BDV93 Transistor Equivalent Substitute - Cross-Reference Search
BDV93 Datasheet (PDF)
..1. Size:219K inchange semiconductor
bdv91 bdv93 bdv95.pdf
bdv91 bdv93 bdv95.pdf
isc Silicon NPN Power Transistor BDV91/93/95DESCRIPTIONCollector Current -I = 10ACCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDV91; 60V(Min)- BDV93CEO(SUS)80V(Min)- BDV95Complement to Type BDV92/94/96Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalamplifi
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: GT250-3B
