BDV95 Datasheet and Replacement
Type Designator: BDV95
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TOP3
BDV95 Substitution
BDV95 Datasheet (PDF)
bdv91 bdv93 bdv95.pdf

isc Silicon NPN Power Transistor BDV91/93/95DESCRIPTIONCollector Current -I = 10ACCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDV91; 60V(Min)- BDV93CEO(SUS)80V(Min)- BDV95Complement to Type BDV92/94/96Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalamplifi
Datasheet: BDV67A , BDV67B , BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , 2222A , BDV96 , BDW10 , BDW10A , BDW12 , BDW12A , BDW14 , BDW14A , BDW16 .
History: 2SC4093 | TMPTA42 | 2SC3785 | KSC5027R | TIP41B | 3DD4242DT | TMPC1623L6
Keywords - BDV95 transistor datasheet
BDV95 cross reference
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History: 2SC4093 | TMPTA42 | 2SC3785 | KSC5027R | TIP41B | 3DD4242DT | TMPC1623L6



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