BDV95 Datasheet. Specs and Replacement
Type Designator: BDV95
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TOP3
BDV95 Substitution
- BJT ⓘ Cross-Reference Search
BDV95 datasheet
isc Silicon NPN Power Transistor BDV91/93/95 DESCRIPTION Collector Current -I = 10A C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BDV91; 60V(Min)- BDV93 CEO(SUS) 80V(Min)- BDV95 Complement to Type BDV92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and general amplifi... See More ⇒
Detailed specifications: BDV67A, BDV67B, BDV67C, BDV67D, BDV91, BDV92, BDV93, BDV94, BC549, BDV96, BDW10, BDW10A, BDW12, BDW12A, BDW14, BDW14A, BDW16
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