BDV95 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDV95
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TOP3
BDV95 Transistor Equivalent Substitute - Cross-Reference Search
BDV95 Datasheet (PDF)
..1. Size:219K inchange semiconductor
bdv91 bdv93 bdv95.pdf
bdv91 bdv93 bdv95.pdf
isc Silicon NPN Power Transistor BDV91/93/95DESCRIPTIONCollector Current -I = 10ACCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDV91; 60V(Min)- BDV93CEO(SUS)80V(Min)- BDV95Complement to Type BDV92/94/96Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalamplifi
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
