All Transistors. BDW10 Datasheet

 

BDW10 Datasheet and Replacement


   Type Designator: BDW10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 180 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BDW10 Datasheet (PDF)

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BDW10

isc Silicon NPN Power Transistor BDW10DESCRIPTIONWith TO-3 PackageHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 , BDV96 , 2SC2240 , BDW10A , BDW12 , BDW12A , BDW14 , BDW14A , BDW16 , BDW16A , BDW21 .

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