All Transistors. BDW10 Datasheet

 

BDW10 Datasheet, Equivalent, Cross Reference Search

Type Designator: BDW10

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 180 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

BDW10 Transistor Equivalent Substitute - Cross-Reference Search

 

BDW10 Datasheet (PDF)

1.1. bdw10.pdf Size:204K _inchange_semiconductor

BDW10
BDW10

isc Silicon NPN Power Transistor BDW10 DESCRIPTION ·With TO-3 Package ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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