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BDW10 Specs and Replacement

Type Designator: BDW10

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 180 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 BDW10 Substitution

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BDW10 datasheet

 ..1. Size:204K  inchange semiconductor

 bdw10.pdf pdf_icon

BDW10

isc Silicon NPN Power Transistor BDW10 DESCRIPTION With TO-3 Package High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

Detailed specifications: BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 , BDV96 , 2SA1015 , BDW10A , BDW12 , BDW12A , BDW14 , BDW14A , BDW16 , BDW16A , BDW21 .

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