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BDW10 PDF Specs and Replacement


   Type Designator: BDW10
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 180 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BDW10 PDF detailed specifications

 ..1. Size:204K  inchange semiconductor
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BDW10

isc Silicon NPN Power Transistor BDW10 DESCRIPTION With TO-3 Package High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

Detailed specifications: BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 , BDV96 , 2SA1015 , BDW10A , BDW12 , BDW12A , BDW14 , BDW14A , BDW16 , BDW16A , BDW21 .

History: MMBT4888 | BC489L | MMBT4403 | BFR740L3RH | CSC2271D | MMBT4401LT1

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