All Transistors. BDW10A Datasheet

 

BDW10A Datasheet and Replacement


   Type Designator: BDW10A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 180 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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BDW10A Datasheet (PDF)

 9.1. Size:204K  inchange semiconductor
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BDW10A

isc Silicon NPN Power Transistor BDW10DESCRIPTIONWith TO-3 PackageHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 , BDV96 , BDW10 , BC639 , BDW12 , BDW12A , BDW14 , BDW14A , BDW16 , BDW16A , BDW21 , BDW21A .

History: BC878 | 2N2427 | 2SC4901

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