BDW10A Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW10A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 180 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BDW10A Transistor Equivalent Substitute - Cross-Reference Search
BDW10A Datasheet (PDF)
9.1. Size:204K inchange semiconductor
bdw10.pdf
bdw10.pdf
isc Silicon NPN Power Transistor BDW10DESCRIPTIONWith TO-3 PackageHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
