BDW10A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDW10A Specs and Replacement

Type Designator: BDW10A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 180 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

BDW10A Substitution

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BDW10A datasheet

9.1. Size:204K inchange semiconductor

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isc Silicon NPN Power Transistor BDW10 DESCRIPTION With TO-3 Package High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

Detailed specifications: BDV67D, BDV91, BDV92, BDV93, BDV94, BDV95, BDV96, BDW10, BC556, BDW12, BDW12A, BDW14, BDW14A, BDW16, BDW16A, BDW21, BDW21A