BDW21C Specs and Replacement
Type Designator: BDW21C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BDW21C Substitution
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BDW21C datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BDW21 DESCRIPTION With TO-3 Package High Current Capability Wide area of safe operation Complement to Type BDW22 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE M... See More ⇒
Detailed specifications: BDW12A, BDW14, BDW14A, BDW16, BDW16A, BDW21, BDW21A, BDW21B, S9018, BDW22, BDW22A, BDW22B, BDW22C, BDW23, BDW23A, BDW23B, BDW23C
Keywords - BDW21C pdf specs
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History: BTD1304N3 | 2SC3601 | 2SC3122 | 2SC5020
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