BDW22B Specs and Replacement
Type Designator: BDW22B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BDW22B Substitution
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BDW22B datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistors BDW22 DESCRIPTION With TO-3 Package High Current Capability Wide area of safe operation Complement to Type BDW21 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE... See More ⇒
Detailed specifications: BDW16, BDW16A, BDW21, BDW21A, BDW21B, BDW21C, BDW22, BDW22A, D882P, BDW22C, BDW23, BDW23A, BDW23B, BDW23C, BDW24, BDW24A, BDW24C
Keywords - BDW22B pdf specs
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History: KT6110V
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