BDW34 Datasheet. Specs and Replacement
Type Designator: BDW34
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BDW34 Substitution
- BJT ⓘ Cross-Reference Search
BDW34 datasheet
BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complementary P... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor BDW34 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.) @I = 10A CE(sat) C High Switching Speed High DC Current Gain- h = 20(Min.) @I = 25A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power application... See More ⇒
Detailed specifications: BDW24A, BDW24C, BDW25, BDW25-10, BDW25-4, BDW25-6, BDW30, BDW32, 2N5551, BDW36, BDW39, BDW40, BDW41, BDW42, BDW43, BDW44, BDW45
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