BDW34 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW34
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDW34 Transistor Equivalent Substitute - Cross-Reference Search
BDW34 Datasheet (PDF)
bdx33 bdw34.pdf
BDX33B BDX33CBDX34B BDX34C COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BDX33B and BDX33C are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration and aremounted in Jedec TO-220 plastic package. Theyare intented for use in power linear and switchingapplications.32The complementary P
bdw34.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BDW34DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.) @I = 10ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 20(Min.) @I = 25AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplication
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
