BDW40 Datasheet. Specs and Replacement
Type Designator: BDW40
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO220
BDW40 Substitution
- BJT ⓘ Cross-Reference Search
BDW40 datasheet
isc Silicon NPN Darlington Power Transistor BDW40 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 5A FE C Low Collector Saturation Voltage V = 2.0V(Max.)@ I = 5.0A CE(sat) C = 3.0V(Max.)@ I = 10A C Complement to Type BDW45 Minimum Lot-to-Lot variations for robust device performance and reliable operat... See More ⇒
Detailed specifications: BDW25-10, BDW25-4, BDW25-6, BDW30, BDW32, BDW34, BDW36, BDW39, 2N5401, BDW41, BDW42, BDW43, BDW44, BDW45, BDW46, BDW48, BDW51
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