All Transistors. BDW40 Datasheet

 

BDW40 Datasheet and Replacement


   Type Designator: BDW40
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220
 

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BDW40 Datasheet (PDF)

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BDW40

isc Silicon NPN Darlington Power Transistor BDW40DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 5AFE CLow Collector Saturation Voltage: V = 2.0V(Max.)@ I = 5.0ACE(sat) C= 3.0V(Max.)@ I = 10ACComplement to Type BDW45Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

Datasheet: BDW25-10 , BDW25-4 , BDW25-6 , BDW30 , BDW32 , BDW34 , BDW36 , BDW39 , TIP41 , BDW41 , BDW42 , BDW43 , BDW44 , BDW45 , BDW46 , BDW48 , BDW51 .

Keywords - BDW40 transistor datasheet

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