BDW41 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW41
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220
BDW41 Transistor Equivalent Substitute - Cross-Reference Search
BDW41 Datasheet (PDF)
..1. Size:215K inchange semiconductor
bdw41.pdf
bdw41.pdf
isc Silicon NPN Darlington Power Transistor BDW41DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 5AFE CLow Collector Saturation Voltage: V = 2.0V(Max.)@ I = 5.0ACE(sat) C= 3.0V(Max.)@ I = 10ACComplement to Type BDW46Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: JC549B
