BDW41 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW41
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220
BDW41 Transistor Equivalent Substitute - Cross-Reference Search
BDW41 Datasheet (PDF)
..1. Size:215K inchange semiconductor
bdw41.pdf
bdw41.pdf
isc Silicon NPN Darlington Power Transistor BDW41DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 5AFE CLow Collector Saturation Voltage: V = 2.0V(Max.)@ I = 5.0ACE(sat) C= 3.0V(Max.)@ I = 10ACComplement to Type BDW46Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N2087
