BDW48 Datasheet. Specs and Replacement

Type Designator: BDW48

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO220

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BDW48 datasheet

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BDW48

isc Silicon PNP Darlington Power Transistor BDW48 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = -5A FE C Low Collector Saturation Voltage V = -2.0V(Max.)@ I = -5.0A CE(sat) C = -3.0V(Max.)@ I = -10A C Complement to Type BDW43 Minimum Lot-to-Lot variations for robust device performance and reliable... See More ⇒

Detailed specifications: BDW39, BDW40, BDW41, BDW42, BDW43, BDW44, BDW45, BDW46, 2SA1943, BDW51, BDW51A, BDW51B, BDW51C, BDW52, BDW52A, BDW52C, BDW53

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