All Transistors. BDW53 Datasheet

 

BDW53 Datasheet and Replacement


   Type Designator: BDW53
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
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BDW53 Datasheet (PDF)

 ..1. Size:202K  inchange semiconductor
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BDW53

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW53DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = 1.5A, V = 3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW54Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NJD2873T4G | FZT560 | ET5065 | AFY29 | CH867UPNGP | PN4122 | SDT9302

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