BDW53 Datasheet. Specs and Replacement

Type Designator: BDW53

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

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BDW53 datasheet

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BDW53

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW53 DESCRIPTION High DC Current Gain h = 750(Min.)@ I = 1.5A, V = 3V FE C CE High Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO Low Collector Saturation Voltage Complement to Type BDW54 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi... See More ⇒

Detailed specifications: BDW48, BDW51, BDW51A, BDW51B, BDW51C, BDW52, BDW52A, BDW52C, TIP42C, BDW53A, BDW53B, BDW53C, BDW53D, BDW54, BDW54A, BDW54B, BDW54C

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