All Transistors. BDW53C Datasheet

 

BDW53C Datasheet and Replacement


   Type Designator: BDW53C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
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BDW53C Datasheet (PDF)

 9.1. Size:202K  inchange semiconductor
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BDW53C

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW53DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = 1.5A, V = 3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW54Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MMBT3905 | FJN3302R | NZT7053 | 2SA1995 | DTL1642 | 2SD896 | 3DD5G

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