All Transistors. BDW54C Datasheet

 

BDW54C Datasheet and Replacement


   Type Designator: BDW54C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
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BDW54C Datasheet (PDF)

 9.1. Size:94K  st
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BDW54C

BDX53A/53B/53CBDX54B/54CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS BDX53B, BDX53C, BDX54B AND BDX54CARE SGS-THOMSON PREFERREDSALESTYPESAPPLICATIONS AUDIO AMPLIFIERS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1TO-220DESCRIPTIONThe BDX53A, BDX53B and BDX53C are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration and aremoun

 9.2. Size:43K  st
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BDW54C

BDX53BFIBDX54BFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION3The BDX53BFI is silicon epitaxial-base NPN 21power transistor in monolithic Darlingtonconfiguration and are mounted in ISOWATT220ISOWATT220plastic package. It is

 9.3. Size:202K  inchange semiconductor
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BDW54C

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BDW54DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = -1.5A, V = -3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW53Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD2257 | MM4019 | BTB1424AT3 | 2N2473 | 2N3183 | 2SB1144S | BF420A

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