BDW59 Datasheet. Specs and Replacement
Type Designator: BDW59
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
BDW59 Substitution
- BJT ⓘ Cross-Reference Search
BDW59 datasheet
isc Silicon NPN Power Transistors BDW55/57/59 DESCRIPTION Collector Emitter Sustaining Voltage- V = 45V- BDW55 CEO(SUS) = 60V- BDW57 = 80V- BDW59 Complement to Type BDW56/58/60 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: BDW54, BDW54A, BDW54B, BDW54C, BDW55, BDW56, BDW57, BDW58, S8550, BDW60, BDW63, BDW63A, BDW63B, BDW63C, BDW63D, BDW64, BDW64A
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