All Transistors. BDW59 Datasheet

 

BDW59 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDW59
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126

 BDW59 Transistor Equivalent Substitute - Cross-Reference Search

   

BDW59 Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
 bdw55 bdw57 bdw59.pdf

BDW59 BDW59

isc Silicon NPN Power Transistors BDW55/57/59DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 45V- BDW55CEO(SUS)= 60V- BDW57= 80V- BDW59Complement to Type BDW56/58/60Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in professional equipment such astelecommunication and etc.ABSOLUTE MAXIMUM RATI

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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