BDW63 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW63
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
BDW63 Transistor Equivalent Substitute - Cross-Reference Search
BDW63 Datasheet (PDF)
bdw63 bdw63a bdw63b bdw63c bdw63d.pdf
isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/DDESCRIPTIONCollector Current -I = 6ACHigh DC Current Gain-h = 750(Min.)@ I = 2AFE CComplement to Type BDW64/A/B/C/DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM R
bdw63 a b c d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min.)@ IC= 2A Complement to Type BDW64/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: BDW54B , BDW54C , BDW55 , BDW56 , BDW57 , BDW58 , BDW59 , BDW60 , S8550 , BDW63A , BDW63B , BDW63C , BDW63D , BDW64 , BDW64A , BDW64B , BDW64C .
