BDW63 Datasheet. Specs and Replacement
Type Designator: BDW63
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO220
BDW63 Substitution
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BDW63 datasheet
bdw63 bdw63a bdw63b bdw63c bdw63d.pdf ![]()
isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION Collector Current -I = 6A C High DC Current Gain-h = 750(Min.)@ I = 2A FE C Complement to Type BDW64/A/B/C/D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM R... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min.)@ IC= 2A Complement to Type BDW64/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER... See More ⇒
Detailed specifications: BDW54B, BDW54C, BDW55, BDW56, BDW57, BDW58, BDW59, BDW60, MJE340, BDW63A, BDW63B, BDW63C, BDW63D, BDW64, BDW64A, BDW64B, BDW64C
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