All Transistors. BDW63B Datasheet

 

BDW63B Datasheet and Replacement


   Type Designator: BDW63B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

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BDW63B Datasheet (PDF)

 ..1. Size:218K  inchange semiconductor
 bdw63 bdw63a bdw63b bdw63c bdw63d.pdf pdf_icon

BDW63B

isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/DDESCRIPTIONCollector Current -I = 6ACHigh DC Current Gain-h = 750(Min.)@ I = 2AFE CComplement to Type BDW64/A/B/C/DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM R

 9.1. Size:253K  inchange semiconductor
 bdw63 a b c d.pdf pdf_icon

BDW63B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min.)@ IC= 2A Complement to Type BDW64/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: BDW55 , BDW56 , BDW57 , BDW58 , BDW59 , BDW60 , BDW63 , BDW63A , TIP35C , BDW63C , BDW63D , BDW64 , BDW64A , BDW64B , BDW64C , BDW64D , BDW73 .

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