BDW63B pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDW63B Specs and Replacement

Type Designator: BDW63B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

BDW63B Substitution

- BJT ⓘ Cross-Reference Search

BDW63B datasheet

..1. Size:218K inchange semiconductor

bdw63 bdw63a bdw63b bdw63c bdw63d.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION Collector Current -I = 6A C High DC Current Gain-h = 750(Min.)@ I = 2A FE C Complement to Type BDW64/A/B/C/D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM R... See More ⇒

9.1. Size:253K inchange semiconductor

bdw63 a b c d.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min.)@ IC= 2A Complement to Type BDW64/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER... See More ⇒

Detailed specifications: BDW55, BDW56, BDW57, BDW58, BDW59, BDW60, BDW63, BDW63A, BD335, BDW63C, BDW63D, BDW64, BDW64A, BDW64B, BDW64C, BDW64D, BDW73