BDW63D Datasheet. Specs and Replacement

Type Designator: BDW63D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

 BDW63D Substitution

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BDW63D datasheet

 ..1. Size:218K  inchange semiconductor

 bdw63 bdw63a bdw63b bdw63c bdw63d.pdf pdf_icon

BDW63D

isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION Collector Current -I = 6A C High DC Current Gain-h = 750(Min.)@ I = 2A FE C Complement to Type BDW64/A/B/C/D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM R... See More ⇒

 9.1. Size:253K  inchange semiconductor

 bdw63 a b c d.pdf pdf_icon

BDW63D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min.)@ IC= 2A Complement to Type BDW64/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER... See More ⇒

Detailed specifications: BDW57, BDW58, BDW59, BDW60, BDW63, BDW63A, BDW63B, BDW63C, B772, BDW64, BDW64A, BDW64B, BDW64C, BDW64D, BDW73, BDW73A, BDW73B

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