BDW64B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW64B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
BDW64B Transistor Equivalent Substitute - Cross-Reference Search
BDW64B Datasheet (PDF)
bdw64 bdw64a bdw64b bdw64c bdw64d.pdf
isc Silicon PNP Darlington Power Transistor BDW64/A/B/C/DDESCRIPTIONCollector Current -I = -6ACHigh DC Current Gain-h = 750(Min.)@ I = -2AFE CComplement to Type BDW63/A/B/C/DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM
bdw64 a b c d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW64/A/B/C/D DESCRIPTION Collector Current -IC= -6A High DC Current Gain-hFE= 750(Min.)@ IC= -2A Complement to Type BDW63/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: GT402D