All Transistors. BDW64C Datasheet

 

BDW64C Datasheet and Replacement


   Type Designator: BDW64C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

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BDW64C Datasheet (PDF)

 ..1. Size:219K  inchange semiconductor
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BDW64C

isc Silicon PNP Darlington Power Transistor BDW64/A/B/C/DDESCRIPTIONCollector Current -I = -6ACHigh DC Current Gain-h = 750(Min.)@ I = -2AFE CComplement to Type BDW63/A/B/C/DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM

 9.1. Size:251K  inchange semiconductor
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BDW64C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW64/A/B/C/D DESCRIPTION Collector Current -IC= -6A High DC Current Gain-hFE= 750(Min.)@ IC= -2A Complement to Type BDW63/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N3985 | 2N2304 | 2N3280

Keywords - BDW64C transistor datasheet

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