All Transistors. BDW64D Datasheet

 

BDW64D Datasheet and Replacement


   Type Designator: BDW64D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

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BDW64D Datasheet (PDF)

 ..1. Size:219K  inchange semiconductor
 bdw64 bdw64a bdw64b bdw64c bdw64d.pdf pdf_icon

BDW64D

isc Silicon PNP Darlington Power Transistor BDW64/A/B/C/DDESCRIPTIONCollector Current -I = -6ACHigh DC Current Gain-h = 750(Min.)@ I = -2AFE CComplement to Type BDW63/A/B/C/DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM

 9.1. Size:251K  inchange semiconductor
 bdw64 a b c d.pdf pdf_icon

BDW64D

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW64/A/B/C/D DESCRIPTION Collector Current -IC= -6A High DC Current Gain-hFE= 750(Min.)@ IC= -2A Complement to Type BDW63/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2G309 | KTC3199M

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