BDW73 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW73
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
BDW73 Transistor Equivalent Substitute - Cross-Reference Search
BDW73 Datasheet (PDF)
bdw73 a b c d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW73/A/B/C/D DESCRIPTION Collector Current -IC= 8A High DC Current Gain-hFE= 750(Min.)@ IC= 3A Complement to Type BDW74/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
bdw73 bdw73a bdw73b bdw73c bdw73d.pdf
isc Silicon NPN Darlington Power Transistor BDW73/A/B/C/DDESCRIPTIONCollector Current -I = 8ACHigh DC Current Gain-h = 750(Min.)@ I = 3AFE CComplement to Type BDW74/A/B/C/DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM R
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
