BDW73B Datasheet. Specs and Replacement
Type Designator: BDW73B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO220
BDW73B Substitution
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BDW73B datasheet
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isc Silicon NPN Darlington Power Transistor BDW73/A/B/C/D DESCRIPTION Collector Current -I = 8A C High DC Current Gain-h = 750(Min.)@ I = 3A FE C Complement to Type BDW74/A/B/C/D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM R... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW73/A/B/C/D DESCRIPTION Collector Current -IC= 8A High DC Current Gain-hFE= 750(Min.)@ IC= 3A Complement to Type BDW74/A/B/C/D APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER... See More ⇒
Detailed specifications: BDW63D, BDW64, BDW64A, BDW64B, BDW64C, BDW64D, BDW73, BDW73A, TIP127, BDW73C, BDW73D, BDW74, BDW74A, BDW74B, BDW74C, BDW74D, BDW83
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