BDX11-5 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX11-5
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO3
BDX11-5 Transistor Equivalent Substitute - Cross-Reference Search
BDX11-5 Datasheet (PDF)
bdx11.pdf
BDX11Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
bdx11.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BDX11DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V (Min)(BR)CEOHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplica
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
