All Transistors. BDX11-7 Datasheet

 

BDX11-7 Datasheet and Replacement


   Type Designator: BDX11-7
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO3
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BDX11-7 Datasheet (PDF)

 9.1. Size:12K  semelab
 bdx11.pdf pdf_icon

BDX11-7

BDX11Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.2. Size:178K  inchange semiconductor
 bdx11.pdf pdf_icon

BDX11-7

INCHANGE Semiconductorisc Silicon NPN Power Transistor BDX11DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V (Min)(BR)CEOHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplica

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KTB2510 | 2SA3802 | D29E2 | 2N5770 | BDS28A | 2N3914 | BCW56B

Keywords - BDX11-7 transistor datasheet

 BDX11-7 cross reference
 BDX11-7 equivalent finder
 BDX11-7 lookup
 BDX11-7 substitution
 BDX11-7 replacement

 

 
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