BDX11-7 Specs and Replacement
Type Designator: BDX11-7
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO3
BDX11-7 Substitution
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BDX11-7 datasheet
BDX11 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor BDX11 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V (Min) (BR)CEO High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applica... See More ⇒
Detailed specifications: BDX10-6 , BDX10-7 , BDX10C , BDX10H , BDX11 , BDX11-4 , BDX11-5 , BDX11-6 , B647 , BDX12 , BDX13 , BDX13-4 , BDX13-5 , BDX13-6 , BDX13-7 , BDX14 , BDX15 .
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