BDX12 Specs and Replacement
Type Designator: BDX12
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BDX12 Substitution
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BDX12 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BDX12 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for application in industrial and comm... See More ⇒
Detailed specifications: BDX10-7 , BDX10C , BDX10H , BDX11 , BDX11-4 , BDX11-5 , BDX11-6 , BDX11-7 , A42 , BDX13 , BDX13-4 , BDX13-5 , BDX13-6 , BDX13-7 , BDX14 , BDX15 , BDX16 .
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