All Transistors. BDX12 Datasheet

 

BDX12 Datasheet and Replacement


   Type Designator: BDX12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BDX12 Datasheet (PDF)

 ..1. Size:180K  inchange semiconductor
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BDX12

INCHANGE Semiconductorisc Silicon NPN Power Transistor BDX12DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for application in industrial and comm

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: TSC1203ECM | A1267S

Keywords - BDX12 transistor datasheet

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