2N1016D Specs and Replacement
Type Designator: 2N1016D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: MT38-2
2N1016D Substitution
- BJT ⓘ Cross-Reference Search
2N1016D datasheet
Detailed specifications: 2N1015C, 2N1015D, 2N1015E, 2N1015F, 2N1016, 2N1016A, 2N1016B, 2N1016C, C3198, 2N1016E, 2N1016F, 2N1017, 2N1018, 2N1019, 2N102, 2N1020, 2N1021
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