All Transistors. BDX13-4 Datasheet

 

BDX13-4 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDX13-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 BDX13-4 Transistor Equivalent Substitute - Cross-Reference Search

   

BDX13-4 Datasheet (PDF)

 9.1. Size:195K  inchange semiconductor
 bdx13.pdf

BDX13-4 BDX13-4

INCHANGE Semiconductorisc Silicon NPN Power Transistor BDX13DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =15-60@I = 8AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 4ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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