BDX13-4 Specs and Replacement
Type Designator: BDX13-4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BDX13-4 Substitution
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BDX13-4 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BDX13 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =15-60@I = 8A FE C Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 4A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching ... See More ⇒
Detailed specifications: BDX10H , BDX11 , BDX11-4 , BDX11-5 , BDX11-6 , BDX11-7 , BDX12 , BDX13 , BD333 , BDX13-5 , BDX13-6 , BDX13-7 , BDX14 , BDX15 , BDX16 , BDX18 , BDX18N .
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