BDX13-6 Specs and Replacement
Type Designator: BDX13-6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO3
BDX13-6 Substitution
- BJT ⓘ Cross-Reference Search
BDX13-6 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BDX13 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =15-60@I = 8A FE C Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 4A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching ... See More ⇒
Detailed specifications: BDX11-4, BDX11-5, BDX11-6, BDX11-7, BDX12, BDX13, BDX13-4, BDX13-5, BD222, BDX13-7, BDX14, BDX15, BDX16, BDX18, BDX18N, BDX20, BDX22
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