BDX24 Datasheet. Specs and Replacement

Type Designator: BDX24  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 29 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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BDX24 datasheet

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BDX24

isc Silicon NPN Power Transistor BDX24 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V (Min) (BR)CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose switching and amplifier applications ABSO... See More ⇒

Detailed specifications: BDX22-5, BDX22-6, BDX22-7, BDX23, BDX23-4, BDX23-5, BDX23-6, BDX23-7, TIP122, BDX24-4, BDX24-5, BDX24-6, BDX24-7, BDX25, BDX25-10, BDX25-4, BDX25-6

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