BDX24-5 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX24-5
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 29 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO3
BDX24-5 Transistor Equivalent Substitute - Cross-Reference Search
BDX24-5 Datasheet (PDF)
bdx24.pdf
isc Silicon NPN Power Transistor BDX24DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V (Min)(BR)CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSO
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N207B