BDX32 Specs and Replacement
Type Designator: BDX32
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 1700 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO3
BDX32 Substitution
- BJT ⓘ Cross-Reference Search
BDX32 datasheet
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Detailed specifications: BDX29, BDX29-10, BDX29-6, BDX30, BDX30-10, BDX30-6, BDX30B, BDX31, B772, BDX33, BDX33A, BDX33B, BDX33C, BDX33D, BDX33E, BDX34, BDX34A
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