BDX33D Datasheet and Replacement

isc Silicon NPN Darlington Power Transistor BDX33DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 3ACE(sat) CComplement to Type BDX34DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

Order this documentMOTOROLAby BDX33B/DSEMICONDUCTOR TECHNICAL DATANPNBDX33BDarlington ComplementarySilicon Power TransistorsBDX33C*PNP. . . designed for general purpose and low speed switching applications.BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 CollectorEmitter Sustaining Voltage at 100 mAdcVCEO(sus) = 80 Vdc (min.) BDX33B, 34BBD

BDX33B BDX33CBDX34B BDX34C COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BDX33B and BDX33C are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration and aremounted in Jedec TO-220 plastic package. Theyare intented for use in power linear and switchingapplications.32The complementary P

BDX33/A/B/CPower Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage: BDX33 45 V: BDX33A 60 V: BDX33B 80 V

BDX33B, BDX33C (NPN)BDX34B, BDX34C (PNP)Darlington ComplementarySilicon Power TransistorsThese devices are designed for general purpose and low speedswitching applications. http://onsemi.comFeaturesDARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.010 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdcCOMPLEMENTARY SILICONVCEO(sus) = 80 Vdc (min) -

BDX33B, BDX33C (NPN)BDX34B, BDX34C (PNP)Darlington ComplementarySilicon Power TransistorsThese devices are designed for general purpose and low speedswitching applications. http://onsemi.comFeaturesDARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.010 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdcCOMPLEMENTARY SILICONVCEO(sus) = 80 Vdc (min) -

NPN BDX33 BDX33A BDX33B BDX33C PNP BDX34 BDX34A BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The com

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33DBDX34, 34A, 34B, 34C, 34DTO-220Plastic PackagePower Darlington for Linear Switchilng ApplicationABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BDX33 BDX33A BDX33B BDX33C BDX33D UNITBDX34 BDX34A BDX34B BDX34C BDX34DCollector -Emitter

isc Silicon NPN Darlington Power Transistor BDX33ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 4AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 4ACE(sat) CComplement to Type BDX34AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

isc Silicon NPN Darlington Power Transistor BDX33CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 3AFE CComplement to Type BDX34CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX33/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX34/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25)

isc Silicon NPN Darlington Power Transistor BDX33DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 45V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 4AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 4ACE(sat) CComplement to Type BDX34Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

isc Silicon NPN Darlington Power Transistor BDX33BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 3ACE(sat) CComplement to Type BDX34BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign