All Transistors. BDX34A Datasheet

 

BDX34A Datasheet and Replacement


   Type Designator: BDX34A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220

 BDX34A Transistor Equivalent Substitute - Cross-Reference Search

   

BDX34A Datasheet (PDF)

 ..1. Size:39K  fairchild semi
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BDX34A

BDX34/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX34 - 45 V BDX34A - 60 V BDX34B... See More ⇒

 ..2. Size:215K  inchange semiconductor
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BDX34A

isc Silicon PNP Darlington Power Transistor BDX34A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -4A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -4A CE(sat) C Complement to Type BDX33A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De... See More ⇒

 9.1. Size:135K  motorola
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BDX34A

Order this document MOTOROLA by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Complementary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B BD... See More ⇒

 9.2. Size:134K  onsemi
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BDX34A

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) - ... See More ⇒

Datasheet: BDX32 , BDX33 , BDX33A , BDX33B , BDX33C , BDX33D , BDX33E , BDX34 , TIP127 , BDX34B , BDX34C , BDX34D , BDX34E , BDX35 , BDX36 , BDX37 , BDX40 .

History: XA102 | 2SD2028 | KSC839R | 2SC1841 | 2SA576 | 2SA389 | BDX29-10

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