BDX34D PDF Specs and Replacement
Type Designator: BDX34D
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70
W
Maximum Collector-Base Voltage |Vcb|: 120
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 200
°C
Electrical Characteristics
Transition Frequency (ft): 20
MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package:
TO220
-
BJT ⓘ Cross-Reference Search
BDX34D PDF detailed specifications
9.1. Size:135K motorola
bdx33b bdx34b.pdf 

Order this document MOTOROLA by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Complementary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B BD... See More ⇒
9.2. Size:39K fairchild semi
bdx34a.pdf 

BDX34/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX34 - 45 V BDX34A - 60 V BDX34B... See More ⇒
9.3. Size:134K onsemi
bdx34cg.pdf 

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) - ... See More ⇒
9.4. Size:134K onsemi
bdx34bg.pdf 

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) - ... See More ⇒
9.5. Size:322K comset
bdx33-bdx34.pdf 

NPN BDX33 BDX33A BDX33B BDX33C PNP BDX34 BDX34A BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO- 220 plastic package. They are intented for use in power linear and switching applications. The com... See More ⇒
9.6. Size:183K cdil
bdx33 bdx34 abcd.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BDX33 BDX33A BDX33B BDX33C BDX33D UNIT BDX34 BDX34A BDX34B BDX34C BDX34D Collector -Emitter ... See More ⇒
9.7. Size:215K inchange semiconductor
bdx34c.pdf 

isc Silicon PNP Darlington Power Transistor BDX34C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -3A CE(sat) C Complement to Type BDX33C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D... See More ⇒
9.8. Size:121K inchange semiconductor
bdx34 a b c.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX34/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX33/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) ... See More ⇒
9.9. Size:215K inchange semiconductor
bdx34b.pdf 

isc Silicon PNP Darlington Power Transistor BDX34B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -3A CE(sat) C Complement to Type BDX33B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De... See More ⇒
9.10. Size:215K inchange semiconductor
bdx34.pdf 

isc Silicon PNP Darlington Power Transistor BDX34 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -4A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -4A CE(sat) C Complement to Type BDX33 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi... See More ⇒
9.11. Size:215K inchange semiconductor
bdx34a.pdf 

isc Silicon PNP Darlington Power Transistor BDX34A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -4A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -4A CE(sat) C Complement to Type BDX33A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De... See More ⇒
Detailed specifications: BDX33B
, BDX33C
, BDX33D
, BDX33E
, BDX34
, BDX34A
, BDX34B
, BDX34C
, 2SC2625
, BDX34E
, BDX35
, BDX36
, BDX37
, BDX40
, BDX40-4
, BDX40-5
, BDX40-6
.
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