BDX41-4 Datasheet. Specs and Replacement

Type Designator: BDX41-4  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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BDX41-4 datasheet

 9.1. Size:201K  inchange semiconductor

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BDX41-4

isc Silicon NPN Power Transistor BDX41 DESCRIPTION With TO-3 Package High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

Detailed specifications: BDX36, BDX37, BDX40, BDX40-4, BDX40-5, BDX40-6, BDX40-7, BDX41, D880, BDX41-5, BDX41-6, BDX41-7, BDX42, BDX43, BDX44, BDX45, BDX46

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