2N2927-46 Specs and Replacement

Type Designator: 2N2927-46

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO46

 2N2927-46 Substitution

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2N2927-46 datasheet

 9.1. Size:331K  general electric

2n292 2n293.pdf pdf_icon

2N2927-46

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 9.2. Size:35K  general electric

2n2926.pdf pdf_icon

2N2927-46

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 9.3. Size:407K  st

2n2920ahr.pdf pdf_icon

2N2927-46

2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features BVCEO 60 V IC (max) 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65 C to +200 C Hi-Rel NPN dual matched bipolar transistor TO-77 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPL Figure 1. Internal schematic ... See More ⇒

 9.4. Size:11K  semelab

2n2920adcsm.pdf pdf_icon

2N2927-46

2N2920ADCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 60V CEO 6.22 0.13 A = 1.27 0.13 I = 0.03A C (0... See More ⇒

Detailed specifications: 2N2926-4, 2N2926-5, 2N2926B, 2N2926G, 2N2926O, 2N2926R, 2N2926Y, 2N2927, 13009, 2N2927-51, 2N2928, 2N2929, 2N292A, 2N293, 2N2930, 2N2931, 2N2932

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