BDX54B Datasheet. Specs and Replacement

Type Designator: BDX54B  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

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BDX54B datasheet

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BDX54B

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t... See More ⇒

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BDX54B

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1... See More ⇒

 ..3. Size:215K  inchange semiconductor

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BDX54B

isc Silicon PNP Darlington Power Transistor BDX54B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.0 V(Max) @ I = -3.0 A CE(sat) C Complement to Type BDX53B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... See More ⇒

 0.1. Size:355K  onsemi

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BDX54B

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1... See More ⇒

Detailed specifications: BDX53D, BDX53E, BDX53F, BDX53H, BDX53S, BDX54, BDX54A, BDX54AFI, D667, BDX54BFI, BDX54C, BDX54CFI, BDX54D, BDX54E, BDX54F, BDX54H, BDX54S

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